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| Datasheet | SI4310BDY-T1-E3 |
| File Size | 149.05 KB |
| Total Pages | 10 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SI4310BDY-T1-E3 |
| Description | MOSFET 2N-CH 30V 7.5A 14SOIC |
SI4310BDY-T1-E3 - Vishay Siliconix
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URL Link
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 7.5A, 9.8A Rds On (Max) @ Id, Vgs 11mOhm @ 10A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 18nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 2370pF @ 15V Power - Max 1.14W, 1.47W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 14-SOIC (0.154", 3.90mm Width) Supplier Device Package 14-SOIC |