Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | SI4463BDY-T1-GE3 |
| File Size | 162.77 KB |
| Total Pages | 8 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | SI4463BDY-T1-GE3, SI4463BDY-T1-E3 |
| Description | MOSFET P-CH 20V 9.8A 8SOIC, MOSFET P-CH 20V 9.8A 8-SOIC |
SI4463BDY-T1-GE3 - Vishay Siliconix
The Products You May Be Interested In
 |
SI4463BDY-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 9.8A 8SOIC | 515 More on Order |
|
SI4463BDY-T1-E3 | Vishay Siliconix | MOSFET P-CH 20V 9.8A 8-SOIC | 36134 More on Order |
URL Link
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 9.8A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V Rds On (Max) @ Id, Vgs 11mOhm @ 13.7A, 10V Vgs(th) (Max) @ Id 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 56nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 1.5W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 9.8A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V Rds On (Max) @ Id, Vgs 11mOhm @ 13.7A, 10V Vgs(th) (Max) @ Id 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 56nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 1.5W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |