Datasheet | SI4505DY-T1-GE3 |
File Size | 133.81 KB |
Total Pages | 9 |
Manufacturer | Vishay Siliconix |
Website | |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | SI4505DY-T1-GE3, SI4505DY-T1-E3 |
Description | MOSFET N/P-CH 30V/8V 8-SOIC, MOSFET N/P-CH 30V/8V 8-SOIC |
SI4505DY-T1-GE3 - Vishay Siliconix
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Vishay Siliconix Manufacturer Vishay Siliconix Series TrenchFET® FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V, 8V Current - Continuous Drain (Id) @ 25°C 6A, 3.8A Rds On (Max) @ Id, Vgs 18mOhm @ 7.8A, 10V Vgs(th) (Max) @ Id 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs 20nC @ 5V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 1.2W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
Vishay Siliconix Manufacturer Vishay Siliconix Series TrenchFET® FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V, 8V Current - Continuous Drain (Id) @ 25°C 6A, 3.8A Rds On (Max) @ Id, Vgs 18mOhm @ 7.8A, 10V Vgs(th) (Max) @ Id 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs 20nC @ 5V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 1.2W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |