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SI4564DY-T1-GE3 Datasheet

SI4564DY-T1-GE3 Cover
DatasheetSI4564DY-T1-GE3
File Size148.77 KB
Total Pages12
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SI4564DY-T1-GE3
Description MOSFET N/P-CH 40V 10A 8SOIC

SI4564DY-T1-GE3 - Vishay Siliconix

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URL Link

SI4564DY-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

10A, 9.2A

Rds On (Max) @ Id, Vgs

17.5mOhm @ 8A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

31nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

855pF @ 20V

Power - Max

3.1W, 3.2W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO