Datasheet | SI4816BDY-T1-GE3 |
File Size | 194.15 KB |
Total Pages | 12 |
Manufacturer | Vishay Siliconix |
Website | |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | SI4816BDY-T1-GE3, SI4816BDY-T1-E3 |
Description | MOSFET 2N-CH 30V 5.8A 8-SOIC, MOSFET 2N-CH 30V 5.8A 8-SOIC |
SI4816BDY-T1-GE3 - Vishay Siliconix
The Products You May Be Interested In
SI4816BDY-T1-GE3 | Vishay Siliconix | MOSFET 2N-CH 30V 5.8A 8-SOIC | 3830 More on Order |
|
SI4816BDY-T1-E3 | Vishay Siliconix | MOSFET 2N-CH 30V 5.8A 8-SOIC | 4217 More on Order |
URL Link
Vishay Siliconix Manufacturer Vishay Siliconix Series LITTLE FOOT® FET Type 2 N-Channel (Half Bridge) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 5.8A, 8.2A Rds On (Max) @ Id, Vgs 18.5mOhm @ 6.8A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 10nC @ 5V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 1W, 1.25W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
Vishay Siliconix Manufacturer Vishay Siliconix Series LITTLE FOOT® FET Type 2 N-Channel (Half Bridge) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 5.8A, 8.2A Rds On (Max) @ Id, Vgs 18.5mOhm @ 6.8A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 10nC @ 5V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 1W, 1.25W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |