Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | SI4892DY-T1-GE3 |
| File Size | 88.1 KB |
| Total Pages | 5 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | SI4892DY-T1-GE3, SI4892DY-T1-E3 |
| Description | MOSFET N-CH 30V 8.8A 8-SOIC, MOSFET N-CH 30V 8.8A 8-SOIC |
SI4892DY-T1-GE3 - Vishay Siliconix
The Products You May Be Interested In
 |
SI4892DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 8.8A 8-SOIC | 401 More on Order |
|
SI4892DY-T1-E3 | Vishay Siliconix | MOSFET N-CH 30V 8.8A 8-SOIC | 423 More on Order |
URL Link
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 8.8A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 12mOhm @ 12.4A, 10V Vgs(th) (Max) @ Id 800mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs 10.5nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 1.6W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 8.8A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 12mOhm @ 12.4A, 10V Vgs(th) (Max) @ Id 800mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs 10.5nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 1.6W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |