Datasheet | SI4936CDY-T1-E3 |
File Size | 184.74 KB |
Total Pages | 9 |
Manufacturer | Vishay Siliconix |
Website | |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | SI4936CDY-T1-E3, SI4936CDY-T1-GE3 |
Description | MOSFET 2N-CH 30V 5.8A 8SO, MOSFET 2N-CH 30V 5.8A 8-SOIC |
SI4936CDY-T1-E3 - Vishay Siliconix
The Products You May Be Interested In
SI4936CDY-T1-E3 | Vishay Siliconix | MOSFET 2N-CH 30V 5.8A 8SO | 475 More on Order |
|
SI4936CDY-T1-GE3 | Vishay Siliconix | MOSFET 2N-CH 30V 5.8A 8-SOIC | 28009 More on Order |
URL Link
Vishay Siliconix Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 5.8A Rds On (Max) @ Id, Vgs 40mOhm @ 5A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 325pF @ 15V Power - Max 2.3W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
Vishay Siliconix Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 5.8A Rds On (Max) @ Id, Vgs 40mOhm @ 5A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 325pF @ 15V Power - Max 2.3W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |