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SI4941EDY-T1-E3 Datasheet

SI4941EDY-T1-E3 Cover
DatasheetSI4941EDY-T1-E3
File Size130.27 KB
Total Pages7
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SI4941EDY-T1-E3
Description MOSFET 2P-CH 30V 10A 8-SOIC

SI4941EDY-T1-E3 - Vishay Siliconix

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SI4941EDY-T1-E3 SI4941EDY-T1-E3 Vishay Siliconix MOSFET 2P-CH 30V 10A 8-SOIC 331

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URL Link

SI4941EDY-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

10A

Rds On (Max) @ Id, Vgs

21mOhm @ 8.3A, 10V

Vgs(th) (Max) @ Id

2.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

70nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

3.6W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO