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| Datasheet | SI4946CDY-T1-GE3 |
| File Size | 226.07 KB |
| Total Pages | 9 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SI4946CDY-T1-GE3 |
| Description | MOSFET N-CHAN DUAL 60V SO-8 |
SI4946CDY-T1-GE3 - Vishay Siliconix
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 5.2A (Ta), 6.1A (Tc) Rds On (Max) @ Id, Vgs 40.9mOhm @ 5.2A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 350pF @ 30V Power - Max 2W (Ta), 2.8W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |