Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | SI4973DY-T1-GE3 |
| File Size | 109.16 KB |
| Total Pages | 6 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | SI4973DY-T1-GE3, SI4973DY-T1-E3 |
| Description | MOSFET 2P-CH 30V 5.8A 8SOIC, MOSFET 2P-CH 30V 5.8A 8-SOIC |
SI4973DY-T1-GE3 - Vishay Siliconix
The Products You May Be Interested In
 |
SI4973DY-T1-GE3 | Vishay Siliconix | MOSFET 2P-CH 30V 5.8A 8SOIC | 394 More on Order |
|
SI4973DY-T1-E3 | Vishay Siliconix | MOSFET 2P-CH 30V 5.8A 8-SOIC | 404 More on Order |
URL Link
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 P-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 5.8A Rds On (Max) @ Id, Vgs 23mOhm @ 7.6A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 1.1W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 P-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 5.8A Rds On (Max) @ Id, Vgs 23mOhm @ 7.6A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 1.1W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |