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| Datasheet | SI5499DC-T1-E3 |
| File Size | 105.54 KB |
| Total Pages | 8 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | SI5499DC-T1-E3, SI5499DC-T1-GE3 |
| Description | MOSFET P-CH 8V 6A 1206-8, MOSFET P-CH 8V 6A 1206-8 |
SI5499DC-T1-E3 - Vishay Siliconix
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 8V Current - Continuous Drain (Id) @ 25°C 6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 36mOhm @ 5.1A, 4.5V Vgs(th) (Max) @ Id 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 35nC @ 8V Vgs (Max) ±5V Input Capacitance (Ciss) (Max) @ Vds 1290pF @ 4V FET Feature - Power Dissipation (Max) 2.5W (Ta), 6.2W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 1206-8 ChipFET™ Package / Case 8-SMD, Flat Lead |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 8V Current - Continuous Drain (Id) @ 25°C 6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 36mOhm @ 5.1A, 4.5V Vgs(th) (Max) @ Id 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 35nC @ 8V Vgs (Max) ±5V Input Capacitance (Ciss) (Max) @ Vds 1290pF @ 4V FET Feature - Power Dissipation (Max) 2.5W (Ta), 6.2W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 1206-8 ChipFET™ Package / Case 8-SMD, Flat Lead |