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| Datasheet | SI5509DC-T1-GE3 |
| File Size | 157.51 KB |
| Total Pages | 12 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | SI5509DC-T1-GE3, SI5509DC-T1-E3 |
| Description | MOSFET N/P-CH 20V 6.1A 1206-8, MOSFET N/P-CH 20V 6.1A 1206-8 |
SI5509DC-T1-GE3 - Vishay Siliconix
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 6.1A, 4.8A Rds On (Max) @ Id, Vgs 52mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 6.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 455pF @ 10V Power - Max 4.5W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SMD, Flat Lead Supplier Device Package 1206-8 ChipFET™ |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 6.1A, 4.8A Rds On (Max) @ Id, Vgs 52mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 6.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 455pF @ 10V Power - Max 4.5W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SMD, Flat Lead Supplier Device Package 1206-8 ChipFET™ |