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| Datasheet | SI5511DC-T1-E3 |
| File Size | 157.65 KB |
| Total Pages | 12 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SI5511DC-T1-E3 |
| Description | MOSFET N/P-CH 30V 4A 1206-8 |
SI5511DC-T1-E3 - Vishay Siliconix
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SI5511DC-T1-E3 | Vishay Siliconix | MOSFET N/P-CH 30V 4A 1206-8 | 384 More on Order |
URL Link
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 4A, 3.6A Rds On (Max) @ Id, Vgs 55mOhm @ 4.8A, 4.5V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 7.1nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 435pF @ 15V Power - Max 3.1W, 2.6W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SMD, Flat Lead Supplier Device Package 1206-8 ChipFET™ |