Datasheet | SI5513CDC-T1-E3 |
File Size | 276.1 KB |
Total Pages | 16 |
Manufacturer | Vishay Siliconix |
Website | |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | SI5513CDC-T1-E3, SI5513CDC-T1-GE3 |
Description | MOSFET N/P-CH 20V 4A 1206-8, MOSFET N/P-CH 20V 4A 1206-8 |
SI5513CDC-T1-E3 - Vishay Siliconix
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SI5513CDC-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 20V 4A 1206-8 | 13248 More on Order |
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Vishay Siliconix Manufacturer Vishay Siliconix Series TrenchFET® FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 4A, 3.7A Rds On (Max) @ Id, Vgs 55mOhm @ 4.3A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 4.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 285pF @ 10V Power - Max 3.1W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SMD, Flat Lead Supplier Device Package 1206-8 ChipFET™ |
Vishay Siliconix Manufacturer Vishay Siliconix Series TrenchFET® FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 4A, 3.7A Rds On (Max) @ Id, Vgs 55mOhm @ 4.4A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 4.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 285pF @ 10V Power - Max 3.1W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SMD, Flat Lead Supplier Device Package 1206-8 ChipFET™ |