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SI5513CDC-T1-E3 Datasheet

SI5513CDC-T1-E3 Cover
DatasheetSI5513CDC-T1-E3
File Size276.1 KB
Total Pages16
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts SI5513CDC-T1-E3, SI5513CDC-T1-GE3
Description MOSFET N/P-CH 20V 4A 1206-8, MOSFET N/P-CH 20V 4A 1206-8

SI5513CDC-T1-E3 - Vishay Siliconix

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URL Link

SI5513CDC-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

4A, 3.7A

Rds On (Max) @ Id, Vgs

55mOhm @ 4.3A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

4.2nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds

285pF @ 10V

Power - Max

3.1W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SMD, Flat Lead

Supplier Device Package

1206-8 ChipFET™

SI5513CDC-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

4A, 3.7A

Rds On (Max) @ Id, Vgs

55mOhm @ 4.4A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

4.2nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds

285pF @ 10V

Power - Max

3.1W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SMD, Flat Lead

Supplier Device Package

1206-8 ChipFET™