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| Datasheet | SI5515CDC-T1-GE3 |
| File Size | 278.41 KB |
| Total Pages | 16 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | SI5515CDC-T1-GE3, SI5515CDC-T1-E3 |
| Description | MOSFET N/P-CH 20V 4A 1206-8, MOSFET N/P-CH 20V 4A 1206-8 |
SI5515CDC-T1-GE3 - Vishay Siliconix
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 4A Rds On (Max) @ Id, Vgs 36mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 11.3nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 632pF @ 10V Power - Max 3.1W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SMD, Flat Lead Supplier Device Package 1206-8 ChipFET™ |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 4A (Tc) Rds On (Max) @ Id, Vgs 36mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 11.3nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 632pF @ 10V Power - Max 3.1W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SMD, Flat Lead Supplier Device Package 1206-8 ChipFET™ |