Top

SI5902BDC-T1-E3 Datasheet

SI5902BDC-T1-E3 Cover
DatasheetSI5902BDC-T1-E3
File Size112.08 KB
Total Pages7
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts SI5902BDC-T1-E3, SI5902BDC-T1-GE3
Description MOSFET 2N-CH 30V 4A 1206-8, MOSFET 2N-CH 30V 4A 1206-8

SI5902BDC-T1-E3 - Vishay Siliconix

SI5902BDC-T1-E3 Datasheet Page 1
SI5902BDC-T1-E3 Datasheet Page 2
SI5902BDC-T1-E3 Datasheet Page 3
SI5902BDC-T1-E3 Datasheet Page 4
SI5902BDC-T1-E3 Datasheet Page 5
SI5902BDC-T1-E3 Datasheet Page 6
SI5902BDC-T1-E3 Datasheet Page 7

The Products You May Be Interested In

SI5902BDC-T1-E3 SI5902BDC-T1-E3 Vishay Siliconix MOSFET 2N-CH 30V 4A 1206-8 423

More on Order

SI5902BDC-T1-GE3 SI5902BDC-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 4A 1206-8 12496

More on Order

URL Link

SI5902BDC-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

4A (Tc)

Rds On (Max) @ Id, Vgs

65mOhm @ 3.1A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

220pF @ 15V

Power - Max

3.12W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SMD, Flat Lead

Supplier Device Package

1206-8 ChipFET™

SI5902BDC-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

4A

Rds On (Max) @ Id, Vgs

65mOhm @ 3.1A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

220pF @ 15V

Power - Max

3.12W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SMD, Flat Lead

Supplier Device Package

1206-8 ChipFET™