Datasheet | SI5935CDC-T1-E3 |
File Size | 244.04 KB |
Total Pages | 11 |
Manufacturer | Vishay Siliconix |
Website | |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | SI5935CDC-T1-E3, SI5935CDC-T1-GE3 |
Description | MOSFET 2P-CH 20V 4A 1206-8, MOSFET 2P-CH 20V 4A 1206-8 |
SI5935CDC-T1-E3 - Vishay Siliconix
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Vishay Siliconix Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 P-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 4A Rds On (Max) @ Id, Vgs 100mOhm @ 3.1A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 11nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 455pF @ 10V Power - Max 3.1W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SMD, Flat Lead Supplier Device Package 1206-8 ChipFET™ |
Vishay Siliconix Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 P-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 4A Rds On (Max) @ Id, Vgs 100mOhm @ 3.1A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 11nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 455pF @ 10V Power - Max 3.1W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SMD, Flat Lead Supplier Device Package 1206-8 ChipFET™ |