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SI5980DU-T1-GE3 Datasheet

SI5980DU-T1-GE3 Cover
DatasheetSI5980DU-T1-GE3
File Size112.57 KB
Total Pages7
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SI5980DU-T1-GE3
Description MOSFET 2N-CH 100V 2.5A CHIPFET

SI5980DU-T1-GE3 - Vishay Siliconix

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URL Link

SI5980DU-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 N-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

2.5A

Rds On (Max) @ Id, Vgs

567mOhm @ 400mA, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

3.3nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

78pF @ 50V

Power - Max

7.8W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

PowerPAK® ChipFET™ Dual

Supplier Device Package

PowerPAK® ChipFet Dual