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SI5997DU-T1-GE3 Datasheet

SI5997DU-T1-GE3 Cover
DatasheetSI5997DU-T1-GE3
File Size160.08 KB
Total Pages9
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SI5997DU-T1-GE3
Description MOSFET 2P-CH 30V 6A PPAK CHIPFET

SI5997DU-T1-GE3 - Vishay Siliconix

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URL Link

SI5997DU-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

6A

Rds On (Max) @ Id, Vgs

54mOhm @ 3A, 10V

Vgs(th) (Max) @ Id

2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

14.5nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

430pF @ 15V

Power - Max

10.4W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

PowerPAK® ChipFET™ Dual

Supplier Device Package

PowerPAK® ChipFet Dual