Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | SI6443DQ-T1-E3 |
| File Size | 74.86 KB |
| Total Pages | 6 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | SI6443DQ-T1-E3, SI6443DQ-T1-GE3 |
| Description | MOSFET P-CH 30V 7.3A 8-TSSOP, MOSFET P-CH 30V 7.3A 8-TSSOP |
SI6443DQ-T1-E3 - Vishay Siliconix
The Products You May Be Interested In
 |
SI6443DQ-T1-E3 | Vishay Siliconix | MOSFET P-CH 30V 7.3A 8-TSSOP | 415 More on Order |
 |
SI6443DQ-T1-GE3 | Vishay Siliconix | MOSFET P-CH 30V 7.3A 8-TSSOP | 144 More on Order |
URL Link
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 7.3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 12mOhm @ 8.8A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 60nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 1.05W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-TSSOP Package / Case 8-TSSOP (0.173", 4.40mm Width) |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 7.3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 12mOhm @ 8.8A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 60nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 1.05W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-TSSOP Package / Case 8-TSSOP (0.173", 4.40mm Width) |