Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | SI6465DQ-T1-GE3 |
| File Size | 79.45 KB |
| Total Pages | 5 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | SI6465DQ-T1-GE3, SI6465DQ-T1-E3 |
| Description | MOSFET P-CH 8V 8.8A 8TSSOP, MOSFET P-CH 8V 8.8A 8TSSOP |
SI6465DQ-T1-GE3 - Vishay Siliconix
The Products You May Be Interested In
 |
SI6465DQ-T1-GE3 | Vishay Siliconix | MOSFET P-CH 8V 8.8A 8TSSOP | 358 More on Order |
 |
SI6465DQ-T1-E3 | Vishay Siliconix | MOSFET P-CH 8V 8.8A 8TSSOP | 325 More on Order |
URL Link
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 8V Current - Continuous Drain (Id) @ 25°C 8.8A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 12mOhm @ 8.8A, 4.5V Vgs(th) (Max) @ Id 450mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs 80nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 1.5W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-TSSOP Package / Case 8-TSSOP (0.173", 4.40mm Width) |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 8V Current - Continuous Drain (Id) @ 25°C 8.8A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 12mOhm @ 8.8A, 4.5V Vgs(th) (Max) @ Id 450mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs 80nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 1.5W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-TSSOP Package / Case 8-TSSOP (0.173", 4.40mm Width) |