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| Datasheet | SI6562CDQ-T1-GE3 |
| File Size | 249.73 KB |
| Total Pages | 17 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SI6562CDQ-T1-GE3 |
| Description | MOSFET N/P-CH 20V 6.7A 8-TSSOP |
SI6562CDQ-T1-GE3 - Vishay Siliconix
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SI6562CDQ-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 20V 6.7A 8-TSSOP | 3700 More on Order |
URL Link
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 6.7A, 6.1A Rds On (Max) @ Id, Vgs 22mOhm @ 5.7A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 850pF @ 10V Power - Max 1.6W, 1.7W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package 8-TSSOP |