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| Datasheet | SI6562DQ-T1-GE3 |
| File Size | 119.78 KB |
| Total Pages | 7 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | SI6562DQ-T1-GE3, SI6562DQ-T1-E3 |
| Description | MOSFET N/P-CH 20V 8-TSSOP, MOSFET N/P-CH 20V 8-TSSOP |
SI6562DQ-T1-GE3 - Vishay Siliconix
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C - Rds On (Max) @ Id, Vgs 30mOhm @ 4.5A, 4.5V Vgs(th) (Max) @ Id 600mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs 25nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 1W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package 8-TSSOP |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C - Rds On (Max) @ Id, Vgs 30mOhm @ 4.5A, 4.5V Vgs(th) (Max) @ Id 600mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs 25nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 1W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package 8-TSSOP |