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| Datasheet | SI7172ADP-T1-RE3 |
| File Size | 234.42 KB |
| Total Pages | 9 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SI7172ADP-T1-RE3 |
| Description | MOSFET N-CHAN 200V POWERPAK SO-8 |
SI7172ADP-T1-RE3 - Vishay Siliconix
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URL Link
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Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V Rds On (Max) @ Id, Vgs 50mOhm @ 10A, 10V Vgs(th) (Max) @ Id 3.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 19.5nC @ 10V Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds 1110pF @ 100V FET Feature - Power Dissipation (Max) - Operating Temperature -55°C ~ 125°C Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8 |