Datasheet | SI7212DN-T1-GE3 |
File Size | 542.48 KB |
Total Pages | 12 |
Manufacturer | Vishay Siliconix |
Website | |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | SI7212DN-T1-GE3, SI7212DN-T1-E3 |
Description | MOSFET 2N-CH 30V 4.9A 1212-8, MOSFET 2N-CH 30V 4.9A 1212-8 |
SI7212DN-T1-GE3 - Vishay Siliconix
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Vishay Siliconix Manufacturer Vishay Siliconix Series - FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 4.9A Rds On (Max) @ Id, Vgs 36mOhm @ 6.8A, 10V Vgs(th) (Max) @ Id 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 1.3W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® 1212-8 Dual Supplier Device Package PowerPAK® 1212-8 Dual |
Vishay Siliconix Manufacturer Vishay Siliconix Series - FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 4.9A Rds On (Max) @ Id, Vgs 36mOhm @ 6.8A, 10V Vgs(th) (Max) @ Id 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 1.3W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® 1212-8 Dual Supplier Device Package PowerPAK® 1212-8 Dual |