Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | SI7216DN-T1-GE3 |
| File Size | 567.88 KB |
| Total Pages | 14 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | SI7216DN-T1-GE3, SI7216DN-T1-E3 |
| Description | MOSFET 2N-CH 40V 6A PPAK 1212-8, MOSFET 2N-CH 40V 6A 1212-8 |
SI7216DN-T1-GE3 - Vishay Siliconix
The Products You May Be Interested In
 |
SI7216DN-T1-GE3 | Vishay Siliconix | MOSFET 2N-CH 40V 6A PPAK 1212-8 | 247 More on Order |
 |
SI7216DN-T1-E3 | Vishay Siliconix | MOSFET 2N-CH 40V 6A 1212-8 | 4504 More on Order |
URL Link
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 6A Rds On (Max) @ Id, Vgs 32mOhm @ 5A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 670pF @ 20V Power - Max 20.8W Operating Temperature -50°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® 1212-8 Dual Supplier Device Package PowerPAK® 1212-8 Dual |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 6A Rds On (Max) @ Id, Vgs 32mOhm @ 5A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 670pF @ 20V Power - Max 20.8W Operating Temperature -50°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® 1212-8 Dual Supplier Device Package PowerPAK® 1212-8 Dual |