Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | SI7413DN-T1-GE3 |
| File Size | 88.46 KB |
| Total Pages | 6 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | SI7413DN-T1-GE3, SI7413DN-T1-E3 |
| Description | MOSFET P-CH 20V 8.4A PPAK 1212-8, MOSFET P-CH 20V 8.4A 1212-8 |
SI7413DN-T1-GE3 - Vishay Siliconix
The Products You May Be Interested In
 |
SI7413DN-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 8.4A PPAK 1212-8 | 338 More on Order |
 |
SI7413DN-T1-E3 | Vishay Siliconix | MOSFET P-CH 20V 8.4A 1212-8 | 290 More on Order |
URL Link
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 8.4A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 15mOhm @ 13.2A, 4.5V Vgs(th) (Max) @ Id 1V @ 400µA Gate Charge (Qg) (Max) @ Vgs 51nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 1.5W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 1212-8 Package / Case PowerPAK® 1212-8 |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 8.4A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 15mOhm @ 13.2A, 4.5V Vgs(th) (Max) @ Id 1V @ 400µA Gate Charge (Qg) (Max) @ Vgs 51nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 1.5W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 1212-8 Package / Case PowerPAK® 1212-8 |