Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | SI7459DP-T1-GE3 |
| File Size | 86.34 KB |
| Total Pages | 6 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | SI7459DP-T1-GE3, SI7459DP-T1-E3 |
| Description | MOSFET P-CH 30V 13A PPAK SO-8, MOSFET P-CH 30V 13A PPAK SO-8 |
SI7459DP-T1-GE3 - Vishay Siliconix
The Products You May Be Interested In
 |
SI7459DP-T1-GE3 | Vishay Siliconix | MOSFET P-CH 30V 13A PPAK SO-8 | 300 More on Order |
 |
SI7459DP-T1-E3 | Vishay Siliconix | MOSFET P-CH 30V 13A PPAK SO-8 | 332 More on Order |
URL Link
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 13A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 6.8mOhm @ 22A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 1.9W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8 |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 13A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 6.8mOhm @ 22A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 1.9W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8 |