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SI7615CDN-T1-GE3 Datasheet

SI7615CDN-T1-GE3 Cover
DatasheetSI7615CDN-T1-GE3
File Size639.79 KB
Total Pages13
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SI7615CDN-T1-GE3
Description MOSFET P-CH 20V 35A POWERPAK1212

SI7615CDN-T1-GE3 - Vishay Siliconix

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SI7615CDN-T1-GE3 SI7615CDN-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 35A POWERPAK1212 7567

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URL Link

SI7615CDN-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET® Gen III

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

35A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

9mOhm @ 12A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

63nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

3860pF @ 10V

FET Feature

-

Power Dissipation (Max)

33W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 1212-8

Package / Case

PowerPAK® 1212-8