Top

SI7633DP-T1-GE3 Datasheet

SI7633DP-T1-GE3 Cover
DatasheetSI7633DP-T1-GE3
File Size339.71 KB
Total Pages13
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SI7633DP-T1-GE3
Description MOSFET P-CH 20V 60A PPAK 8SO

SI7633DP-T1-GE3 - Vishay Siliconix

SI7633DP-T1-GE3 Datasheet Page 1
SI7633DP-T1-GE3 Datasheet Page 2
SI7633DP-T1-GE3 Datasheet Page 3
SI7633DP-T1-GE3 Datasheet Page 4
SI7633DP-T1-GE3 Datasheet Page 5
SI7633DP-T1-GE3 Datasheet Page 6
SI7633DP-T1-GE3 Datasheet Page 7
SI7633DP-T1-GE3 Datasheet Page 8
SI7633DP-T1-GE3 Datasheet Page 9
SI7633DP-T1-GE3 Datasheet Page 10
SI7633DP-T1-GE3 Datasheet Page 11
SI7633DP-T1-GE3 Datasheet Page 12
SI7633DP-T1-GE3 Datasheet Page 13

The Products You May Be Interested In

SI7633DP-T1-GE3 SI7633DP-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 60A PPAK 8SO 421

More on Order

URL Link

SI7633DP-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3.3mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

260nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

9500pF @ 10V

FET Feature

-

Power Dissipation (Max)

6.25W (Ta), 104W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8