Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | SI7942DP-T1-GE3 |
| File Size | 335.58 KB |
| Total Pages | 12 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | SI7942DP-T1-GE3, SI7942DP-T1-E3 |
| Description | MOSFET 2N-CH 100V 3.8A PPAK SO-8, MOSFET 2N-CH 100V 3.8A PPAK SO-8 |
SI7942DP-T1-GE3 - Vishay Siliconix
The Products You May Be Interested In
 |
SI7942DP-T1-GE3 | Vishay Siliconix | MOSFET 2N-CH 100V 3.8A PPAK SO-8 | 572 More on Order |
 |
SI7942DP-T1-E3 | Vishay Siliconix | MOSFET 2N-CH 100V 3.8A PPAK SO-8 | 159 More on Order |
URL Link
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 3.8A Rds On (Max) @ Id, Vgs 49mOhm @ 5.9A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 1.4W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® SO-8 Dual Supplier Device Package PowerPAK® SO-8 Dual |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 3.8A Rds On (Max) @ Id, Vgs 49mOhm @ 5.9A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 1.4W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® SO-8 Dual Supplier Device Package PowerPAK® SO-8 Dual |