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SI7980DP-T1-E3 Datasheet

SI7980DP-T1-E3 Cover
DatasheetSI7980DP-T1-E3
File Size340.37 KB
Total Pages18
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts SI7980DP-T1-E3, SI7980DP-T1-GE3
Description MOSFET 2N-CH 20V 8A PPAK SO-8, MOSFET 2N-CH 20V 8A PPAK SO-8

SI7980DP-T1-E3 - Vishay Siliconix

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SI7980DP-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 N-Channel (Half Bridge)

FET Feature

Standard

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

8A

Rds On (Max) @ Id, Vgs

22mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

27nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

1010pF @ 10V

Power - Max

19.8W, 21.9W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

PowerPAK® SO-8 Dual

Supplier Device Package

PowerPAK® SO-8 Dual

SI7980DP-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 N-Channel (Half Bridge)

FET Feature

Standard

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

8A

Rds On (Max) @ Id, Vgs

22mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

27nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

1010pF @ 10V

Power - Max

19.8W, 21.9W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

PowerPAK® SO-8 Dual

Supplier Device Package

PowerPAK® SO-8 Dual