Datasheet | SI7980DP-T1-E3 |
File Size | 340.37 KB |
Total Pages | 18 |
Manufacturer | Vishay Siliconix |
Website | |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | SI7980DP-T1-E3, SI7980DP-T1-GE3 |
Description | MOSFET 2N-CH 20V 8A PPAK SO-8, MOSFET 2N-CH 20V 8A PPAK SO-8 |
SI7980DP-T1-E3 - Vishay Siliconix
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Vishay Siliconix Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Half Bridge) FET Feature Standard Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 8A Rds On (Max) @ Id, Vgs 22mOhm @ 5A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1010pF @ 10V Power - Max 19.8W, 21.9W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® SO-8 Dual Supplier Device Package PowerPAK® SO-8 Dual |
Vishay Siliconix Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Half Bridge) FET Feature Standard Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 8A Rds On (Max) @ Id, Vgs 22mOhm @ 5A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1010pF @ 10V Power - Max 19.8W, 21.9W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® SO-8 Dual Supplier Device Package PowerPAK® SO-8 Dual |