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| Datasheet | SI7983DP-T1-GE3 |
| File Size | 91.88 KB |
| Total Pages | 6 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | SI7983DP-T1-GE3, SI7983DP-T1-E3 |
| Description | MOSFET 2P-CH 20V 7.7A PPAK SO-8, MOSFET 2P-CH 20V 7.7A PPAK SO-8 |
SI7983DP-T1-GE3 - Vishay Siliconix
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 P-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 7.7A Rds On (Max) @ Id, Vgs 17mOhm @ 12A, 4.5V Vgs(th) (Max) @ Id 1V @ 600µA Gate Charge (Qg) (Max) @ Vgs 74nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 1.4W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® SO-8 Dual Supplier Device Package PowerPAK® SO-8 Dual |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 P-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 7.7A Rds On (Max) @ Id, Vgs 17mOhm @ 12A, 4.5V Vgs(th) (Max) @ Id 1V @ 600µA Gate Charge (Qg) (Max) @ Vgs 74nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 1.4W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® SO-8 Dual Supplier Device Package PowerPAK® SO-8 Dual |