Datasheet | SI8439DB-T1-E1 |
File Size | 247.58 KB |
Total Pages | 11 |
Manufacturer | Vishay Siliconix |
Website | |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | SI8439DB-T1-E1 |
Description | MOSFET P-CH 8V MICROFOOT |
SI8439DB-T1-E1 - Vishay Siliconix
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SI8439DB-T1-E1 | Vishay Siliconix | MOSFET P-CH 8V MICROFOOT | 471 More on Order |
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Vishay Siliconix Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 8V Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V Rds On (Max) @ Id, Vgs 25mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 50nC @ 4.5V Vgs (Max) ±5V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 1.1W (Ta), 2.7W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 4-Microfoot Package / Case 4-UFBGA |