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| Datasheet | SI9936DY,518 |
| File Size | 260.66 KB |
| Total Pages | 13 |
| Manufacturer | NXP |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SI9936DY,518 |
| Description | MOSFET 2N-CH 30V 5A SOT96-1 |
SI9936DY,518 - NXP
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SI9936DY,518 | NXP | MOSFET 2N-CH 30V 5A SOT96-1 | 313 More on Order |
URL Link
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Manufacturer NXP USA Inc. Series TrenchMOS™ FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 5A Rds On (Max) @ Id, Vgs 50mOhm @ 5A, 10V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 900mW Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |