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SIA406DJ-T1-GE3 Datasheet

SIA406DJ-T1-GE3 Cover
DatasheetSIA406DJ-T1-GE3
File Size224.99 KB
Total Pages9
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SIA406DJ-T1-GE3
Description MOSFET N-CH 12V 4.5A SC-70-6

SIA406DJ-T1-GE3 - Vishay Siliconix

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SIA406DJ-T1-GE3 SIA406DJ-T1-GE3 Vishay Siliconix MOSFET N-CH 12V 4.5A SC-70-6 460

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URL Link

SIA406DJ-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

4.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

19.8mOhm @ 10.8A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

23nC @ 5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

1380pF @ 6V

FET Feature

-

Power Dissipation (Max)

3.5W (Ta), 19W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SC-70-6 Single

Package / Case

PowerPAK® SC-70-6