Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | SIA448DJ-T1-GE3 |
| File Size | 229.23 KB |
| Total Pages | 9 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SIA448DJ-T1-GE3 |
| Description | MOSFET N-CH 20V 12A SC70-6L |
SIA448DJ-T1-GE3 - Vishay Siliconix
The Products You May Be Interested In
 |
SIA448DJ-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V 12A SC70-6L | 494 More on Order |
URL Link
www.zouser.com/datasheet/SIA448DJ-T1-GE3
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 12A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 15mOhm @ 12.4A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 35nC @ 8V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 1380pF @ 1V FET Feature - Power Dissipation (Max) 3.5W (Ta), 19.2W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SC-70-6 Single Package / Case PowerPAK® SC-70-6 |