Datasheet | SIDC02D60C6X1SA4 |
File Size | 60.26 KB |
Total Pages | 4 |
Manufacturer | Infineon Technologies |
Website | https://www.infineon.com |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | SIDC02D60C6X1SA4 |
Description | DIODE GEN PURP 600V 6A WAFER |
SIDC02D60C6X1SA4 - Infineon Technologies
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SIDC02D60C6X1SA4 | Infineon Technologies | DIODE GEN PURP 600V 6A WAFER | 182 More on Order |
URL Link
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Infineon Technologies Manufacturer Infineon Technologies Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 6A (DC) Voltage - Forward (Vf) (Max) @ If 1.95V @ 6A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 27µA @ 600V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case Die Supplier Device Package Sawn on foil Operating Temperature - Junction -40°C ~ 175°C |