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SIDC06D120H6X1SA4 Datasheet

SIDC06D120H6X1SA4 Cover
DatasheetSIDC06D120H6X1SA4
File Size66.28 KB
Total Pages4
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 1 part numbers
Associated Parts SIDC06D120H6X1SA4
Description DIODE GEN PURP 1.2KV 7.5A WAFER

SIDC06D120H6X1SA4 - Infineon Technologies

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SIDC06D120H6X1SA4 SIDC06D120H6X1SA4 Infineon Technologies DIODE GEN PURP 1.2KV 7.5A WAFER 617

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SIDC06D120H6X1SA4

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

1200V

Current - Average Rectified (Io)

7.5A (DC)

Voltage - Forward (Vf) (Max) @ If

1.6V @ 7.5A

Speed

Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

27µA @ 1200V

Capacitance @ Vr, F

-

Mounting Type

Surface Mount

Package / Case

Die

Supplier Device Package

Sawn on foil

Operating Temperature - Junction

-55°C ~ 150°C