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SIDC53D120H6X1SA3 Datasheet

SIDC53D120H6X1SA3 Cover
DatasheetSIDC53D120H6X1SA3
File Size63.89 KB
Total Pages4
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 1 part numbers
Associated Parts SIDC53D120H6X1SA3
Description DIODE GEN PURP 1.2KV 100A WAFER

SIDC53D120H6X1SA3 - Infineon Technologies

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SIDC53D120H6X1SA3 SIDC53D120H6X1SA3 Infineon Technologies DIODE GEN PURP 1.2KV 100A WAFER 274

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SIDC53D120H6X1SA3

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

1200V

Current - Average Rectified (Io)

100A (DC)

Voltage - Forward (Vf) (Max) @ If

1.6V @ 100A

Speed

Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

27µA @ 1200V

Capacitance @ Vr, F

-

Mounting Type

Surface Mount

Package / Case

Die

Supplier Device Package

Sawn on foil

Operating Temperature - Junction

-55°C ~ 150°C