Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | SIE844DF-T1-GE3 |
| File Size | 136.67 KB |
| Total Pages | 7 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | SIE844DF-T1-GE3, SIE844DF-T1-E3 |
| Description | MOSFET N-CH 30V 44.5A POLARPAK, MOSFET N-CH 30V 44.5A POLARPAK |
SIE844DF-T1-GE3 - Vishay Siliconix
The Products You May Be Interested In
 |
SIE844DF-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 44.5A POLARPAK | 428 More on Order |
 |
SIE844DF-T1-E3 | Vishay Siliconix | MOSFET N-CH 30V 44.5A POLARPAK | 382 More on Order |
URL Link
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 44.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 7mOhm @ 12.1A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2150pF @ 15V FET Feature - Power Dissipation (Max) 5.2W (Ta), 25W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 10-PolarPAK® (U) Package / Case 10-PolarPAK® (U) |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 44.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 7mOhm @ 12.1A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2150pF @ 15V FET Feature - Power Dissipation (Max) 5.2W (Ta), 25W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 10-PolarPAK® (U) Package / Case 10-PolarPAK® (U) |