Datasheet | SIHA21N65EF-E3 |
File Size | 156.42 KB |
Total Pages | 7 |
Manufacturer | Vishay Siliconix |
Website | |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | SIHA21N65EF-E3 |
Description | MOSFET N-CH 650V 21A TO-220 |
SIHA21N65EF-E3 - Vishay Siliconix
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Vishay Siliconix Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 21A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 180mOhm @ 11A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 106nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2322pF @ 100V FET Feature - Power Dissipation (Max) 35W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Full Pack Package / Case TO-220-3 Full Pack |