Datasheet | SIHA22N60EF-GE3 |
File Size | 152.36 KB |
Total Pages | 8 |
Manufacturer | Vishay Siliconix |
Website | |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | SIHA22N60EF-GE3 |
Description | MOSFET N-CHAN 600V TO-220 FP |
SIHA22N60EF-GE3 - Vishay Siliconix
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Vishay Siliconix Manufacturer Vishay Siliconix Series EF FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 19A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 182mOhm @ 11A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 96nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1423pF @ 100V FET Feature - Power Dissipation (Max) 33W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Full Pack Package / Case TO-220-3 Full Pack |