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| Datasheet | SIHB100N60E-GE3 |
| File Size | 192.56 KB |
| Total Pages | 10 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SIHB100N60E-GE3 |
| Description | MOSFET E SERIES 600V D2PAK (TO-2 |
SIHB100N60E-GE3 - Vishay Siliconix
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SIHB100N60E-GE3 | Vishay Siliconix | MOSFET E SERIES 600V D2PAK (TO-2 | 2150 More on Order |
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Manufacturer Vishay Siliconix Series E FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 30A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 100mOhm @ 13A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1851pF @ 100V FET Feature - Power Dissipation (Max) 208W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK (TO-263) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |