Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | SIHB11N80E-GE3 |
| File Size | 131.3 KB |
| Total Pages | 7 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SIHB11N80E-GE3 |
| Description | MOSFET N-CH 800V D2PAK TO-263 |
SIHB11N80E-GE3 - Vishay Siliconix
The Products You May Be Interested In
 |
SIHB11N80E-GE3 | Vishay Siliconix | MOSFET N-CH 800V D2PAK TO-263 | 118 More on Order |
URL Link
www.zouser.com/datasheet/SIHB11N80E-GE3
|
Manufacturer Vishay Siliconix Series * FET Type - Technology - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type - Supplier Device Package - Package / Case - |