Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | SIHB33N60ET5-GE3 |
| File Size | 222.6 KB |
| Total Pages | 9 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 3 part numbers |
| Associated Parts | SIHB33N60ET5-GE3, SIHB33N60ET1-GE3, SIHB33N60E-GE3 |
| Description | MOSFET N-CH 600V 33A TO263, MOSFET N-CH 600V 33A TO263, MOSFET N-CH 600V 33A TO-263 |
SIHB33N60ET5-GE3 - Vishay Siliconix
The Products You May Be Interested In
 |
SIHB33N60ET5-GE3 | Vishay Siliconix | MOSFET N-CH 600V 33A TO263 | 460 More on Order |
 |
SIHB33N60ET1-GE3 | Vishay Siliconix | MOSFET N-CH 600V 33A TO263 | 559 More on Order |
 |
SIHB33N60E-GE3 | Vishay Siliconix | MOSFET N-CH 600V 33A TO-263 | 10463 More on Order |
URL Link
|
Manufacturer Vishay Siliconix Series E FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 33A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 99mOhm @ 16.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 3508pF @ 100V FET Feature - Power Dissipation (Max) 278W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263 (D²Pak) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer Vishay Siliconix Series E FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 33A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 99mOhm @ 16.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 3508pF @ 100V FET Feature - Power Dissipation (Max) 278W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263 (D²Pak) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 33A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 99mOhm @ 16.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 3508pF @ 100V FET Feature - Power Dissipation (Max) 278W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |