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| Datasheet | SIHD1K4N60E-GE3 |
| File Size | 196.5 KB |
| Total Pages | 9 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SIHD1K4N60E-GE3 |
| Description | MOSFET N-CH DPAK TO-252 |
SIHD1K4N60E-GE3 - Vishay Siliconix
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SIHD1K4N60E-GE3 | Vishay Siliconix | MOSFET N-CH DPAK TO-252 | 4750 More on Order |
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Manufacturer Vishay Siliconix Series E FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 4.2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.45Ohm @ 500mA, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 172pF @ 100V FET Feature - Power Dissipation (Max) 63W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252AA Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |