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| Datasheet | SIHF22N60E-GE3 |
| File Size | 171.24 KB |
| Total Pages | 8 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | SIHF22N60E-GE3, SIHF22N60E-E3 |
| Description | MOSFET N-CH 600V 21A TO220, MOSFET N-CH 600V 21A TO220 |
SIHF22N60E-GE3 - Vishay Siliconix
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Manufacturer Vishay Siliconix Series E FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 21A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 180mOhm @ 11A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1920pF @ 100V FET Feature - Power Dissipation (Max) 35W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Full Pack Package / Case TO-220-3 Full Pack |
Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 21A (Tc) Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs 180mOhm @ 11A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds 1920pF @ 100V FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type Through Hole Supplier Device Package TO-220 Full Pack Package / Case TO-220-3 Full Pack |