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SIHF8N50L-E3 Datasheet

SIHF8N50L-E3 Cover
DatasheetSIHF8N50L-E3
File Size130.16 KB
Total Pages7
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SIHF8N50L-E3
Description MOSFET N-CH 500V 8A TO220FP

SIHF8N50L-E3 - Vishay Siliconix

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URL Link

SIHF8N50L-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1Ohm @ 4A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

873pF @ 25V

FET Feature

-

Power Dissipation (Max)

40W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220 Full Pack

Package / Case

TO-220-3 Full Pack