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| Datasheet | SIJ186DP-T1-GE3 |
| File Size | 234.77 KB |
| Total Pages | 10 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SIJ186DP-T1-GE3 |
| Description | MOSFET N-CH 60V PPAK SO-8L |
SIJ186DP-T1-GE3 - Vishay Siliconix
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Manufacturer Vishay Siliconix Series TrenchFET® Gen IV FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 23A (Ta), 79.4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 4.5mOhm @ 15A, 10V Vgs(th) (Max) @ Id 3.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs 37nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1710pF @ 30V FET Feature - Power Dissipation (Max) 5W (Ta), 57W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8 |